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US 6,611,451 B1Granted
Memory array and wordline driver supply voltage differential in standby
AssigneeTexas Instruments Incorporated
InventorTheodore W. Houston
Life of this patent
Estimating the term…
Abstract
An SRAM array 22, with improved leakage in standby, raises the wordline driver lower supply voltage Vss-WL when raising the array lower supply voltage Vss-array in standby. When the SRAM array 22 is in active mode, a source voltage is provided to the SRAM array lower supply node Vss-array and to the wordline driver lower supply node Vss-WL. When the SRAM array is in standby mode, a voltage offset is provided between the source voltage and both the SRAM array lower supply node Vss-array and the wordline driver lower supply node Vss-WL.
Claims12
A circuit comprising:
- a memory array having an array supply voltage node;
- a wordline driver coupled to the memory array and having a wordline driver supply voltage node, wherein the wordline driver supply voltage node is coupled to the array supply voltage node;
- a first offset voltage device coupled between the wordline driver supply voltage node and a first source voltage node;
- a first bypass switch coupled between the wordline driver and a second source voltage node;
- and
- a second offset voltage device coupled between the array supply voltage node and the wordline driver supply voltage node.
3 more elements
Dependencies are inferred from the claim text.