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US 6,611,331 B2Granted
Method of measuring surface form of semiconductor thin film
AssigneeOki Electric Industry Co., Ltd.
InventorMakoto Nakazawa
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Abstract
The surface form of a semiconductor thin film such as a polysilicon film formed on a semiconductor substrate is measured through spectro-ellipsometry or measured by performing an IPA quantitative analysis through GC. Mass (gas chromatography) after exposing the semiconductor thin film to IPA (isopropyl alcohol) vapor and drying the semiconductor thin film. Through either of these methods, the surface form of the polysilicon film can be easily and quickly measured.
Claims11
A method of measuring surface form of a semiconductor thin film, wherein:
- IPA (isopropyl alcohol) is uniformly deposited on a surface of said semiconductor thin film formed at a surface of a semiconductor substrate, a quantitative analysis of IPA released from said surface of said semiconductor thin film is performed, and said surface form of said semiconductor thin film is measured based upon a quantity of IPA released as detected during the quantitative analysis of IPA.
A method of measuring surface form of a semiconductor thin film comprising:
- uniformly depositing isopropyl alcohol on a surface of the semiconductor thin film;
- determining an amount of released isopropyl alcohol that releases from the surface of the semiconductor thin film;
- and
- determining the surface form of the semiconductor thin film using a previously determined relationship between released isopropyl alcohol quantity and effective semiconductor thin film thickness, and the determined amount of released isopropyl alcohol.
1 more element
Dependencies are inferred from the claim text.