Voltage-nonlinear resistor, method for making the same, and varistor using the same
AssigneeMurata Manufacturing Co., Ltd.
InventorsYukihiro Kamoshida, Kazutaka Nakamura
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Abstract
A varistor includes a voltage-nonlinear resistor and varistor electrodes provided on the upper and lower surfaces of the voltage-nonlinear resistor. The voltage-nonlinear resistor is primarily composed of SiC (silicon carbide) particles which are doped with at least one dopant such as N (nitrogen) and P (phosphorus). The varistor electrodes are composed of a metal, e.g., Ag, Pd, Pt, Al, Ni or Cu. The SiC particles of the voltage-nonlinear resistor further contain at least one element of Al (aluminum) and B (boron) in an amount of about 0.01 to 100 parts by weight with respect to 100 parts by weight of the SiC particles.
Claims17
A voltage-nonlinear resistor comprising doped SiC particles containing at least one of elemental Al and B, wherein surfaces of the doped SiC particles are oxidized.
Dependencies are inferred from the claim text.