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US 6,611,064 B1Granted
Semiconductor device and method for manufacturing the same
AssigneeHitachi Chemical Company, Ltd.
InventorsTakashi Kousaka, Naoya Suzuki, Toshiaki Tanaka, Masaaki Yasuda, Aizou Kaneda
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Abstract
In the present invention, provided are a semiconductor device having a semiconductor-element-mounting substrate on which a semiconductor element has been mounted via an adhesive having an exothermic-reaction curing start temperature of 130° C. or below as measured with a differential scanning calorimeter at a heating rate of 10° C./minute, and a process for its fabrication.
Claims3
A semiconductor device comprising:
- a semiconductor-element-mounting substrate having an insulating base material on which a wiring pattern has been formed;
- a semiconductor element having an electrode, and bonded to the semiconductor-element-mounting substrate with an adhesive;
- said electrode being connected electrically with said wiring pattern;
- and
- an organic insulating encapsulant encapsulating at least said electrode;
- wherein said organic insulating encapsulant has the following properties:
- a glass transition temperature between molding temperature and room temperature;
- a difference of 0.6×105/° C. or above between the coefficient of linear expansion of said semiconductor-element-mounting substrate and the coefficient of linear expansion of said organic insulating encapsulant at a temperature not higher than the glass transition temperature;
- a curing shrinkage factor of 0.11% or less at the time of the molding of said organic insulating encapsulant;
- a saturation moisture absorption of 0.36% by weight or less at 85° C. and 85% RH;
- and
- a flexural modulus of 4.0 GPa or below at the molding temperature of the organic insulating encapsulant;
- said adhesive having an exothermic-reaction curing start temperature of 130° C. or below as measured with a differential scanning calorimeter at a heating rate of 10° C./minute, and
- said adhesive having a saturation moisture absorption of 0.18% by weight or less at 30° C. and 85% RH.
11 more elements
A process for fabricating a semiconductor device, comprising the steps of;
- bonding with an adhesive a semiconductor element to the surface of a semiconductor-element-mounting substrate having an insulating base material on which a wiring pattern has been formed, to connect an electrode of the semiconductor element electrically with the wiring pattern;
- and
- encapsulating at least said electrode of the semiconductor element with an organic insulating encapsulant;
- wherein said organic insulating encapsulant has the following properties:
- a glass transition temperature between molding temperature and room temperature;
- a difference of 0.6×105/° C. or above between the coefficient of linear expansion of said semiconductor-element-mounting substrate and the coefficient of linear expansion of said organic insulating encapsulant at a temperature not higher than the glass transition temperature;
- a curing shrinkage factor of 0.11% or less at the time of the molding of said organic insulating encapsulant;
- a saturation moisture absorption of 0.36% by weight or less at 85° C. and 85% RH;
- and
- a flexural modulus of 4.0 GPa or below at the molding temperature of the organic insulating encapsulant;
- said adhesive comprising an adhesive having an exothermic-reaction curing start temperature of 130° C. or below as measured with a differential scanning calorimeter at a heating rate of 10° C./minute and a saturation moisture absorption of 0.18% by weight or less at 30° C. and 85% RH.
8 more elements
Dependencies are inferred from the claim text.