US 6,611,061 B2 · Tantalum-aluminum-nitrogen material for semiconductor devices

Abstract

Ta—Al—N is formed on a semiconductor device structure, such as a wiring line, to prevent interdiffusion between surrounding layers. Ta—Al—N serves as a diffusion between two conductor layers, a semiconductor layer and a conductor layer, an insulator layer and a conductor layer, an insulator layer and a semiconductor layer, or two semiconductor layers. Ta—Al—N also promotes adhesion of adjacent layers, such as two conductor layers, a conductor layer and an insulator layer, a semiconductor layer and a conductor layer, or two semiconductor layers. Ta—Al—N is also useful for forming a contact or electrode. The disclosed Ta—Al—N includes between 0.5% and 99.0% aluminum, between 0.5% and 99.0% tantalum, and between 0.5% and 99.0% nitrogen. A Ta—Al—N layer has a thickness between 50 Å and 6000 Å, and as part of a wiring line, has a thickness between 1% and 25% of the wiring line thickness.

Claims26

Dependent claims

A semiconductor device, comprising:

a first structure;
a second structure comprising an alloy including tantalum, aluminum, and nitrogen adjacent said first structure;
and
a third structure adjacent said second structure, said second structure preventing interdiffusion of material between said first structure and said third structure.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/092,648Filed 7 Mar 2002 · continuation

Priority

10 Jun 1996

Published

US 2002/0100981 A11 Aug 2002

Granted

26 Aug 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10W 20/037
In openings in dielectrics: the barrier, adhesion or liner layers being on top of a main fill metal
H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics
H10W 20/038
Of conductive barrier, adhesion or liner layers: covering conductive structures
H10W 20/425
Characterised by their conductive parts: barrier, adhesion or liner layers

Family

Application08/660,849Parent of this continuation · filed 10 Jun 1996

Application09/206,511Parent of this continuation · filed 7 Dec 1998

US 5,892,281 AParent of this continuation · filed 6 Apr 1999

Application09/645,907Parent of this continuation · filed 25 Aug 2000

US 6,133,636 AParent of this continuation · filed 17 Oct 2000

US 2002/0100981 A1Pre-grant publication · published 1 Aug 2002

US 6,404,057 B1Parent of this continuation

US 6,611,061 B2This patent

From the US filing history. Foreign family members aren’t listed.

Tantalum-aluminum-nitrogen material for semiconductor devices

Life of this patent

Tantalum-aluminum-nitrogen material for semiconductor devices

Life of this patent

Abstract

Claims26