Semiconductor device having a damascene type wiring layer

A semiconductor device, comprising:

• a first insulating film formed on a semiconductor substrate;
• a groove formed in the first insulating film;
• a second insulating film formed on an inner wall of the groove;
• a conductive film formed in the groove via the second insulating film;
• and
• a third insulating film formed so as to cover an upper surface of the conductive film,
• wherein a level of an upper surface of the first insulating film near the second insulating film is gradually lowered from a position close to the second insulating film.

A semiconductor device, comprising:

• an insulation film formed on a semiconductor substrate;
• a groove formed in the insulating film;
• a Cu wiring formed in the groove;
• and
• a barrier layer formed in the groove and made of a superposed structure of an Al layer and an intermediate layer or an Al alloy and an intermediate layer formed on an upper surface of the Cu wiring.

A semiconductor device comprising:

• an insulation film formed on a semiconductor substrate;
• a groove formed in the insulating film;
• a Cu wiring formed in the groove;
• a barrier layer formed in the groove and made of a superposed structure of an Al layer and an intermediate layer or an Al alloy and an intermediate layer formed on an upper surface of the Cu wiring;
• and
• a conductive film formed on the side and bottom walls of the groove and surrounding side walls of the Cu wiring and the barrier layer made of the superposed structure.