Lateral bipolar transistor and method of making same

An integrated circuit having a lateral bipolar transistor and at least one CMOS device, comprising:

• a substrate of a first conductivity type;
• an active base region of a second conductivity type over the substrate, the second conductivity type being opposite the first conductivity type;
• a collector comprising first well regions of the first conductivity type located in the active base region and laterally bounding an intervening region of the active base region, and a first conductive layer of the first conductivity type on the first well regions, wherein the first well regions include respective shallow surface well regions of the first conductivity type having la higher conductivity;
• and
• an emitter comprising a second well region located in the active base region at a location laterally between and spaced from the first well regions, and a second conductive layer of the first conductivity type on the second well region,
• wherein, said first conductive layer of the first conductivity type and said second conductive layer of the first conductivity type comprise a lateral spacing that is defined by a silicide protect layer and said lateral spacing is smaller than the lateral spacing between said first well region and said second well region.