Inductor with patterned ground shield

A semiconductor device, comprising:

• an SOI substrate including a semiconductor substrate, a buried oxide film disposed on said semiconductor substrate, and an SOI layer disposed on said buried oxide film;
• a shield layer disposed in a surface of said SOI layer and including a plurality of isolation films and a plurality of SOI regions, said plurality of isolation films being selectively disposed and extending from said surface of said SOI layer through said SOI layer to said buried oxide film, said plurality of SOI regions being electrically isolated from each other by said plurality of isolation films;
• an inductance element disposed over a region in which said shield layer is formed, with an interlayer insulation film therebetween;
• and
• a plurality of trenches disposed under said plurality of isolation films of said shield layer, said plurality of trenches extending through said buried oxide film into said semiconductor substrate.

A semiconductor device, comprising:

• a shield layer including a semiconductor substrate, a plurality of isolation films extending from a surface of said semiconductor substrate to a predetermined depth, and a plurality of active regions divided by said plurality of isolation films;
• an inductance element disposed over a region in which said shield layer is formed, with an interlayer insulation film therebetween;
• and
• a plurality of trenches disposed under said plurality of isolation films of said shield layer, said plurality of trenches reaching a predetermined depth in said semiconductor substrate.

A semiconductor device, comprising:

• an SOI layer having a cavity portion including at least one cavity formed therein;
• an insulation film disposed on a surface of said semiconductor layer;
• an inductance element disposed on a surface of said insulation film over said cavity portion;
• and
• a shield layer disposed in a surface of said SOI layer between said cavity portion and said inductance element,
• wherein said shield layer comprises:
• a first group of SOI regions of a first conductivity type, and
• a second group of SOI regions of a second conductivity type,
• said first group of SOI regions and said second group of SOI regions being combined to constitute a lurality of diodes.