Semiconductor device and method for its manufacture
AssigneesNEC Corporation, NEC Electronics Corporation
InventorRyoichi Nakamura
Life of this patent
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Abstract
A semiconductor device is disclosed including an insulated gate field effect transistor (IGFET) having a gate insulating layer (2), a gate electrode (3), and a source-drain layer (5). The IGFET may include a bird's beak insulating film (4) in a region in which the gate insulating layer (2) overlaps the source-drain layer (5). The bird's beak insulating film (4) may have a thickness that is greater than the gate insulating film (2). In this way, inter-band tunneling may be reduced. A plurality of IGFETs may include bird's beak insulating films having different configurations in accordance with operating conditions of the circuit in which the particular IGFET is included.
Claims18
A semiconductor device, comprising:
- a first insulated gate field effect transistor (IGFET), the first IGFET includes a gate insulating film having a film thickness greater in a first region where a gate electrode overlaps a first source-drain diffusion layer than in a channel region and the gate insulating film forms a bird's beak configuration where the gate insulating film is thicker at the edge of the gate electrode;
- and
- a second IGFET having a second gate insulating film that does not have the bird's beak configuration.
A semiconductor device, comprising:
- a first IGFET including a first IGFET gate insulating film, a first IGFET gate electrode, a first IGFET source-drain diffusion layer, and a first IGFET channel region;
- a first bird's beak insulating film formed in a first region where the first IGFET gate electrode overlaps the first IGFET source-drain region, the first bird's beak insulating film having a thickness greater than the first IGFET gate insulating film;
- a second IGFET including a second IGFET gate insulating film, a second IGFET gate electrode, a second IGFET source-drain diffusion layer, and a second IGFET channel region;
- a second bird's beak insulating film formed in a second region where the second IGFET gate electrode overlaps the second IGFET source-drain region, the second bird's beak insulating film having a thickness greater than the second IGFET gate insulating film;
- and
- the first bird's beak insulating film has a different configuration than the second bird's beak insulating film.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a first gate insulating film on the surface of a semiconductor substrate;
- forming a first gate electrode on the first gate insulating film, the first gate electrode having a first gate width defined by a first first gate edge and a second first gate edge;
- introducing an impurity in a region around the first gate electrode for enhancing the speed of thermal oxidation;
- and
- forming a first bird's beak insulating film under the first gate electrode at the first first gate edge and the second first gate edge.
Dependencies are inferred from the claim text.