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US 6,611,022 B2Granted
Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Akiharu Miyanaga, Jun Koyama, Takeshi Fukunaga
Life of this patent
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Abstract
A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
Claims56
An electroluminescence display device comprising:
- a substrate;
- an insulating film over the substrate;
- and
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein the insulating film has at least one asperity of less than 30 Å in height on the upper surface thereof.
2 more elements
An electroluminescence display device comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- and
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein the asperity has a width more than 100 Å.
2 more elements
An electroluminescence display device comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein crystals of the crystalline semiconductor film extend in parallel with the insulating film.
1 more element
A dynamic random access memory comprising:
- a substrate;
- an insulating film over the substrate;
- at least one word line;
- at least one bit line intersecting perpendicularly to the word line;
- a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- a interlayer insulating film on the crystalline semiconductor film;
- and
- an electrode over a drain region of the crystalline semiconductor film with the interlayer insulating film interposed therebetween,
- wherein the insulating film has at least one asperity of less than 30 Å in height on the upper surface thereof.
6 more elements
A dynamic random access memory comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- and
- a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- a interlayer insulating film on the crystalline semiconductor film;
- and
- an electrode over a drain region of the crystalline semiconductor film with the interlayer insulating film interposed therebetween,
- wherein the asperity has a width more than 100 Å.
5 more elements
A dynamic random access memory comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- an interlayer insulating film on the crystalline semiconductor film;
- and
- an electrode over a drain region of the crystalline semiconductor film with the interlayer insulating film interposed therebetween,
- wherein crystals of the crystalline silicon semiconductor film extend in parallel with the insulating film.
4 more elements
A static random access memory comprising:
- a substrate;
- an insulating film over the substrate;
- at least one word line;
- at least one bit line intersecting perpendicularly to the word line;
- at least one a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- an interlayer insulating film over the crystalline semiconductor film;
- and
- a polysilicon film over the interlayer insulating film, the polysilicon film electrically connected with the crystalline semiconductor film,
- wherein the insulating film has at least one asperity of less than 30 Å in height on the upper surface thereof.
6 more elements
A static random access memory comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- and
- at least one a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- a interlayer insulating film over the crystalline semiconductor film;
- a polysilicon film over the interlayer insulating film, the polysilicon film electrically connected with the crystalline semiconductor film;
- and
- wherein the asperity has a width more than 100 Å.
5 more elements
A static random access memory comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- at least one a crystalline semiconductor film comprising silicon at an intersection of the word line and the bit line, formed on the insulating film;
- a interlayer insulating film over the crystalline semiconductor film;
- a polysilicon film over the interlayer insulating film, the polysilicon film electrically connected with the crystalline semiconductor film;
- and
- wherein crystals of the crystalline semiconductor film extend in parallel with the substrate.
4 more elements
An electronic device comprising:
- a substrate;
- an insulating film over the substrate;
- and
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein the insulating film has at least one asperity of less than 30 Å in height on the upper surface thereof.
2 more elements
An electronic device comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- and
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein the asperity has a width more than 100 Å.
2 more elements
An electronic device comprising:
- a substrate;
- an insulating film over the substrate, the insulating film having at least one asperity of less than 30 Å in height on the upper surface thereof;
- a crystalline semiconductor film comprising silicon formed on the insulating film,
- wherein crystals of the crystalline semiconductor film extend in parallel with the insulating film.
1 more element
Dependencies are inferred from the claim text.