Back to results
US 6,611,017 B2Granted
Semiconductor device provided with capacitor having cavity-provided electrode
AssigneeKabushiki Kaisha Toshiba
InventorKatsuhiko Hieda
Life of this patent
Estimating the term…
Abstract
A plurality of storage node electrodes are formed on a semiconductor substrate. A capacitor insulating film is formed on the storage node electrodes. A plate electrode, facing the storage node electrodes, is formed on the capacitor insulating film. A cavity is formed in the plate electrode.
Claims23
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a plurality of capacitors formed on the semiconductor substrate and having a plurality of first electrodes, a capacitor insulating film and a second electrode, the capacitor insulating film being interposed between the plurality of first electrodes and the second electrode,
- wherein a cavity is present in the second electrode.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of storage node electrodes formed on the semiconductor substrate;
- a capacitor insulating film formed on the plurality of storage node electrodes;
- and
- a plate electrode formed on the capacitor insulating film and opposing to the plurality of storage node electrodes on the capacitor insulating film, and at least one cavity formed in the plate electrode.
2 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of storage node electrodes formed on the semiconductor substrate and spaced apart from one another;
- a capacitor insulating film formed on upper surfaces and side surfaces of the plurality of storage node electrodes;
- and
- a plate electrode formed on the upper surfaces of the plurality of storage node electrodes and between adjacent storage node electrodes, a cavity being within the plate electrode,
- the capacitor insulating film being interposed between the plurality of storage node electrodes and the plate electrode.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a capacitor formed on the semiconductor substrate and having a first electrode, a capacitor insulating film and a second electrode, the capacitor insulating film being interposed between the first electrode and the second electrode,
- wherein a cavity is present in the second electrode.
1 more element
Dependencies are inferred from the claim text.