Capacitor for semiconductor device and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorWon Cheol Cho
Life of this patent
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Abstract
A capacitor for a semiconductor device is disclosed with increased capacitance which is produced by a simplified manufacturing process. The capacitor has a storage node electrode structure formed on the semiconductor device having impurity regions formed therein. The storage node electrode structure includes a buried layer formed in a storage node hole defined by the semiconductor device, the buried layer being in contact with at least one impurity region, a bottom layer formed on the buried layer and extending beyond the buried layer, a first cylindrical electrode having first walls upwardly extending from the bottom layer, and second cylindrical electrodes having second walls upwardly extending from the bottom layer and disposed on outer sides of the first cylindrical electrode.
Claims8
A storage node electrode structure for a capacitor of a semiconductor device having impurity regions formed therein, comprising:
- a buried layer disposed in a hole of the semiconductor device, said buried layer being in contact with at least one impurity region;
- a bottom layer formed on said buried layer and extending beyond said buried layer;
- a first cylindrical electrode having first walls upwardly extending from said bottom layer;
- and
- second cylindrical electrodes having second walls upwardly extending from said bottom layer and disposed on outer sides of said first cylindrical electrode;
- wherein a width of each of said second cylindrical electrodes in a horizontal direction is less than a width of said first cylindrical electrode in the horizontal direction, and
- a width of each of said second cylindrical electrodes in a transverse direction is substantially the same as a width of said first cylindrical electrode.
A semiconductor device having a capacitor formed therein, comprising:
- a substrate having impurity regions formed therein;
- an insulating layer disposed on said substrate;
- a buried layer disposed in a storage node area defined by at least said insulating layer, wherein said buried layer is in contact with at least one of said impurity regions;
- a bottom layer formed on said buried layer and extending beyond said buried layer;
- a first cylindrical electrode having first walls upwardly extending from said bottom layer;
- second cylindrical electrodes having second walls upwardly extending from said bottom layer and disposed on outer sides of said first cylindrical electrode;
- a dielectric layer disposed of said first cylindrical electrode and said second cylindrical electrodes;
- and
- an upper electrode disposed on said dielectric layer;
- wherein a width of each of said second cylindrical electrodes in a horizontal direction is less than a width of said first cylindrical electrode in the horizontal direction, and
- a width of each of said second cylindrical electrodes in a traverse direction is substantially the same as a width of said first cylindrical electrode in the transverse direction.
Dependencies are inferred from the claim text.