Gallium nitride based light emitting element
AssigneeSharp Kabushiki Kaisha
InventorTaiji Morimoto
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Abstract
A gallium nitride based light emitting element includes an n type electrode formed on one main surface of an n type gallium nitride substrate, in which the area ratio of the n type electrode with respect to the area of the one main surface is set to be in the range of at least 5% and at most 60%, and the n type electrode includes an n type ohmic electrode layer for introducing current.
Claims6
A gallium nitride based light emitting element, comprising an n type electrode formed on one main surface of an n type gallium nitride substrate, wherein area ratio of said n type electrode with respect to the area of said one main surface is set to be in a range of at least 5% and at most 60%, and said n type electrode includes an n type ohmic electrode layer for introducing current, wherein
- thickness of said substrate is at least 40 μm.
Dependencies are inferred from the claim text.