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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Akiharu Miyanaga, Satoshi Teramoto
Estimating the term…
Semiconductor devices based on thin film transistors formed over substrates. In one embodiment, a semiconductor device comprises at least two thin film transistors formed over a substrate, each of said thin film transistors having a crystalline semiconductor film comprising silicon formed on an insulating surface as an active region thereof, wherein said crystalline semiconductor film of each of said two thin film transistors has substantially no grain boundary therein, and a crystal axis of said crystalline semiconductor film in one of said two thin film transistors deviates from a crystal axis of the crystalline semiconductor film of the other, and the deviation of the crystal axis is within ±10°.
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising a thin film transistor, comprising:
A semiconductor device comprising at least two thin film transistors, each comprising:
A semiconductor device comprising at least two thin film transistors, each comprising:
A semiconductor device comprising at least two thin film transistors, each comprising:
A semiconductor device comprising at least first and second thin film transistors, each comprising:
A semiconductor device comprising at least first and second thin film transistors, each comprising:
A semiconductor device comprising at least first and second thin film transistors, each comprising:
Dependencies are inferred from the claim text.