Gallium nitride-based III-V group compound semiconductor
AssigneeNichia Corporation
InventorsShuji Nakamura, Takao Yamada, Masayuki Senoh, Motokazu Yamada, Kanji Bando
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Abstract
A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
Claims18
A gallium-nitride based III-V Group compound semiconductor light-emitting device comprising a p-type layer comprising a gallium nitride-based III-V Group compound semiconductor doped with a p-type dopant, and an electrode ohmically contacting said p-type layer and comprising a metallic material having a thickness of from 0.001 μm to 1 μm.
A method of fabricating a gallium nitride-based III-V Group compound semiconductor light-emitting device, comprising providing a layer of a metallic material in contact with a p-type layer comprising a gallium nitride-based III-V Group compound semiconductor doped with a p-type dopant, said metallic material layer having a thickness of from 0.001 μm to 1 μm, and annealing said metallic material layer, thereby converting said metallic material layer into an electrode ohmically contacting said p-type layer.
Dependencies are inferred from the claim text.