Proximity effect correction method for charged particle beam exposure

A method to perform proximity effect correction of charged particle beam exposure pattern data, comprising:

• partitioning a placement surface of the exposure pattern into meshes each smaller in area than a maximum size of one shot for pattern exposure;
• determining a pattern area density of each mesh;
• determining an effective pattern area density by smoothing said pattern area densities;
• determining an exposure intensity due to a backscattering term of a basic exposure intensity distribution function as a value proportional to said effective pattern area density;
• and performing auxiliary exposure on meshes each short of an exposure dose with one shot for a pattern.

A charged particle beam exposure method to perform proximity effect correction on exposure pattern data, comprising:

• self-correcting a width of the exposure pattern data by:
• determining an exposure intensity distribution of the exposure pattern data based on a forward-scattering intensity;
• checking whether a peak width of the exposure intensity distribution, at a predetermined percentage of a peak value of the exposure intensity distribution, equals a design width;
• dimensionally shifting, when the peak width of the exposure intensity distribution is greater than the design width, the exposure pattern data to a self-corrected pattern;
• and
• repeating the operations of self-correcting until, in an X and a Y direction, the peak width of the exposure intensity distribution at a predetermined percent of the peak value of the exposure intensity distribution is equal to the design width;
• correcting an exposure dose by:
• determining a forward scattering intensity at the predetermined percent of the peak value of the exposure intensity distribution;
• determining a pattern area density;
• smoothing the pattern area density;
• determining a corrected exposure dose;
• generating an auxiliary exposure by:
• determining an auxiliary exposure dose;
• generating an auxiliary shot;
• and
• returning to the operation of smoothing the pattern area density and repeating operations until corrected exposure data provide pattern dimensions that converge within a predetermined precision.