Charged particle beam drawing apparatus and charged particle beam drawing method
AssigneeNEC Electronics Corporation
InventorYasuhisa Yamada
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AssigneeNEC Electronics Corporation
InventorYasuhisa Yamada
Estimating the term…
An electron beam emitted by an electron beam source, is deflected by a first pattern selection deflector and irradiated onto a predetermined aperture on a first mask. The electron beam penetrating through the first mask is deflected by a second pattern selection deflector, irradiates onto a second mask, and further irradiates on a semiconductor wafer provided on a wafer stage, as a result, a partial blank shot is executed. On the second mask, a cell projection exposure aperture to be drawn a center portion pattern of a cell array pattern, is provided and a cell projection exposure aperture for an excess pattern is not provided. On the first mask, a main aperture and an aperture to be irradiated an excess pattern portion having an area of 1/N of the main aperture to the semiconductor wafer, are provided, wherein N is an integer.
A cell projection exposure charged particle beam drawing apparatus comprising:
A cell projection exposure charged particle beam drawing method comprising the steps of:
Dependencies are inferred from the claim text.