ZnMgS-based UV detectors
AssigneeThe Hong Kong University of Science and Technology
InventorsIam Keong Sou, Chi Wai Marcus Wu, Kam Sing Wong, Ke-Lun George Wong
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Abstract
UV detectors comprising undoped Zn1-xMgxS as the UV responsive active material. Where x exceeds 0.3 the thickness of the active material must be below a critical value, for example if 0.30<x<1.00, and the active material is formed as a layer of a thickness t wherein 5000 Å≧t≧100 Å. A particularly preferred combination of x and thickness is x=0.57 and t≦1400 Å because at around these values the UV response of the active material is similar to the UV response of human skin.
Claims17
A UV detector comprising undoped Zn1-xMgxS as the UV responsive active material.
A method of forming a UV detector comprising the steps of:
- (e) depositing a first electrode layer of n+-Zn1-yMgyS:Al on a substrate,
- (f) depositing a UV responsive active layer of Zn1-xMgxS on at least a part of the upper surface of said first electrode layer,
- (g) depositing a UV transparent second electrode layer on said active layer, and
- (h) forming an Ohmic contact on said first electrode layer.
Dependencies are inferred from the claim text.