Photoelectric conversion device
AssigneeKYOCERA Corporation
InventorsShin Sugawara, Takeshi Kyoda, Hisao Arimune
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Abstract
Plasma is generated from a plasma generating gas comprising an inert gas and hydrogen gas. Silicon material is passed through the plasma and heated so as to form a crystalline silicon particle containing hydrogen at a concentration of 1×1016-1×1020. A great number of the crystalline silicon particles of p-type or n-type are deposited on a substrate as the electrode of one side. An insulator is formed among the crystalline silicon particles on the substrate, and a n-type or p-type semiconductor layer is formed over the crystalline silicon particles, thereby fabricating a photoelectric conversion device. The photoelectric conversion device using the crystalline silicon particles exhibits high photoelectric conversion efficiency.
Claims1
A photoelectric conversion device comprising:
- a substrate;
- numerous first-conductivity-type crystalline silicon particles deposited on the substrate being in contact with the substrate;
- an insulator formed in clearances among the crystalline silicon particles on the substrate;
- and
- an opposite-conductivity-type semiconductor layer formed over the crystalline silicon particles and the insulator for forming a pn-junction between the layer and the crystalline silicon particles, wherein the crystalline silicon particles contain hydrogen at a concentration of 1×1016-1×1020 atoms/cm3.
Dependencies are inferred from the claim text.