Single-mode DBR laser with improved phase-shift section
AssigneeApplied Optoelectronics, Inc.
InventorsWen-Yen Hwang, Klaus Alexander Anselm, Jun Zheng
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AssigneeApplied Optoelectronics, Inc.
InventorsWen-Yen Hwang, Klaus Alexander Anselm, Jun Zheng
Estimating the term…
An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region amplifies, by stimulated emission, light in the laser cavity at the lasing wavelength. A first grating section adjacent to the active region and having a first reflectance and a first effective index of refraction. A second grating section adjacent to the active region and having a second reflectance and the first effective index of refraction. The first and second grating sections have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section is disposed adjacent to the active region and between the first and second grating sections and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation.
An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength, the laser comprising:
The laser of claim 11, wherein the grating stripe material consists of InGaAsP and the cladding material consists of InP.
An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength, the laser comprising:
Dependencies are inferred from the claim text.