Semiconductor laser apparatus

Abstract

According to one aspect of the present invention, there is provided a semiconductor laser device, including: a semiconductor substrate of a first conductivity type; an active layer having a stripe structure formed on the semiconductor substrate; a first buried layer of a second conductivity type formed on the semiconductor substrate and in a vicinity of the active layer; a second buried layer of the first conductivity type formed on the first buried layer and in the vicinity of the active layer; and a third buried layer of the second conductivity type formed on the second buried layer and in the vicinity of the active layer. In this semiconductor laser device, a difference between a refractive index of the first buried layer and a refractive index of the second buried layer is about 0.02 or less, and a difference between the refractive index of the second buried layer and a refractive index of the third buried layer is about 0.02 or less.

Dependencies are inferred from the claim text.