Spin-valve thin-film magnetic element provided with single free magnetic layer

A spin-valve thin-film magnetic element comprising:

• a substrate;
• a composite provided on the substrate, the composite comprising:
• an antiferromagnetic layer;
• a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization vector of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer in contact with the pinned magnetic layer;
• and
• a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization vector of the free magnetic layer being oriented in a direction intersecting the magnetization vector of the pinned magnetic layer;
• hard bias layers provided on both sides of the composite so that the magnetization vector of the free magnetic layer intersects the magnetization vector of the pinned magnetic layer;
• and
• electrode layers provided on the hard bias layers, the electrode layers applying a sensing current to the composite,
• wherein the free magnetic layer comprises a single layer composed of a CoFe-based alloy;
• and
• wherein the total volume of crystal grains constituting the free magnetic layer in which the <111> direction of the crystal grains is predominantly oriented substantially in a direction perpendicular to the plain of the free magnetic layer is 50 percent or less of the volume of the free magnetic layer.

A thin-film magnetic head comprising a spin-valve thin-film magnetic element, the spin-valve thin-film magnetic element comprising:

• a substrate;
• a composite provided on the substrate, the composite comprising:
• an antiferromagnetic layer;
• pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization vector of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer in contact with the pinned magnetic layer;
• and
• a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization vector of the free magnetic layer being oriented in a direction intersecting the magnetization vector of the pinned magnetic layer;
• hard bias layers provided on both sides of the composite so that the magnetization vector of the free magnetic layer intersects the magnetization vector of the pinned magnetic layer;
• and
• electrode layers provided on the hard bias layers, the electrode layers applying a sensing current to the composite,
• wherein the free magnetic layer comprises a single layer composed of a CoFe-based alloy;
• and
• wherein the average diameter in the thickness direction of crystal grains constituting the free magnetic layer is substantially the same as or less than the thickness of the free magnetic layer.

A thin-film magnetic head comprising a spin-valve thin-film magnetic element, the spin-valve thin-film magnetic element comprising:

• a substrate;
• a composite provided on the substrate, the composite comprising:
• an antiferromagnetic layer;
• a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization vector of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;
• a nonmagnetic conductive layer in contact with the pinned magnetic layer;
• and
• a free magnetic layer in contact with the nonmagnetic conductive layer, the magnetization vector of the free magnetic layer being oriented in a direction intersecting the magnetization vector of the pinned magnetic layer;
• hard bias layers provided on both sides of the composite so that the magnetization vector of the free magnetic layer intersects the magnetization vector of the pinned magnetic layer;
• and
• electrode layers provided on the hard bias layers, the electrode layers applying a sensing current to the composite,
• wherein the free magnetic layer comprises a single layer composed of a CoFe-based alloy;
• and
• wherein the total volume of crystal grains constituting the free magnetic layer in which the <111> direction of the crystal grains is predominantly oriented substantially in a direction perpendicular to the plain of the free magnetic layer is 50 percent or less of the volume of the free magnetic layer.