Magnetoresistance effect device utilizing an oxide film to produce antiferromagnetic exchange-coupling between first and second magnetic films in either the pinned layer or the free layer of the device

A magnetoresistance effect device, comprising:

• a free layer whose magnetization direction is easily rotated by an external magnetic field;
• a non-magnetization layer;
• and
• a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed,
• wherein the free layer includes:
• a first non-magnetic layer for exchange-coupling;
• and
• first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film,
• the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re, and
• the first magnetic film has an intensity of magnetization M1 and a thickness t1 and the second magnetic film has an intensity of magnetization M2 and a thickness t2, and a product (M1×t1) is substantially different from a product (M2×t2).

A magnetoresistance effect memory device, comprising:

• a magnetoresistance effect device including:
• a free layer whose magnetization direction is easily rotated by an external magnetic field,
• a non-magnetization layer, and
• a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed,
• wherein the pinned layer includes:
• a non-magnetic film for exchange-coupling;
• and
• first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the non-magnetic film,
• the non-magnetic film for exchange-coupling includes one of the oxides of Ru, Ir, Rh, and Re;
• a word line for generating a magnetic field so as to invert the magnetization direction of the free layer;
• and
• a sense line for detecting a change in resistance of the magnetoresistance effect device.

A magnetoresistance effect memory device, comprising:

• a magnetoresistance effect device including:
• a free layer whose magnetization direction is easily rotated by an external magnetic field,
• a non-magnetization layer, and
• a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed,
• wherein the free layer includes:
• a first non-magnetic layer for exchange-coupling;
• and
• first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film,
• the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re, and
• the first magnetic film has an intensity of magnetization M1 and a thickness t1 and the second magnetic film has an intensity of magnetization M2 and a thickness t2, and a product (M1×t1) is substantially different from a product (M2×t2);
• a word line for generating a magnetic field so as to invert the magnetization direction of the free layer;
• and
• a sense line for detecting a change in resistance of the magnetoresistance effect device.