Back to results
US 6,608,689 B1Granted
Combination thin-film stress and thickness measurement device
AssigneeTherma-Wave, Inc.
InventorsLanhua Wei, Jon Opsal, Allan Rosencwaig
Life of this patent
Estimating the term…
Abstract
A composite metrology tool, measures basic optical parameters of thin films (e.g., thickness, index of refraction, and birefringence) and stress (e.g., wafer displacements, such as bow and warp). These measurements are combined (e.g. in a processor) using optimization techniques to yield accurate overall information of the wafer parameters.
Claims13
A method of analyzing the characteristics of a thin film on a semiconductor wafer comprising the steps of:
- directing a first probe beam of radiation to reflect off the wafer surface;
- measuring the change in magnitude or polarization of the reflected probe beam induced by the interaction with the wafer and generating first signals responsive thereto;
- directing a second probe beam of radiation to reflect of the wafer;
- measuring the angular deviation of the reflected probe induced by the interaction with the wafer and generating second signals responsive thereto;
- analyzing the first and second signals in order to determine characteristics of the wafer including the thickness of the film and the stress in the film.
2 more elements
Dependencies are inferred from the claim text.