Back to results
US 6,608,359 B2Granted
Semiconductor device incorporating hemispherical solid immersion lens, apparatus and method for manufacturing the same
AssigneeNEC Electronics Corporation
InventorHideki Kitahata
Life of this patent
Estimating the term…
Abstract
In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.
Claims6
A semiconductor device having a front surface where circuits are formed and a back surface, comprising a hemispherical solid immersion lens formed at the back surface of said semiconductor device in a body with said semiconductor device.
Dependencies are inferred from the claim text.