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AssigneeKabushiki Kaisha Toshiba
InventorsYusuke Kohyama, Nobuo Hayasaka, Katsuya Okumura
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A gate insulation film is formed on semiconductor substrate, a gate electrodes are formed on the gate insulation film, and source/drain diffusion layers are formed. Silicon nitride films are formed on a side wall of the gate electrodes, a silicon oxide film is formed on the overall surface, and the silicon oxide film is etched back to have the same height as that of the gate electrodes so that the surface is flattened, and then the surface of the gate electrodes are etched by a predetermined thickness to form a first stepped portion from the silicon oxide film, the first stepped portion is filled up by a tungsten film, the surface of the tungsten film is etched by a predetermined thickness so that a second stepped portion is formed, and then the second stepped portion is filled by a silicon nitride film.
A semiconductor device comprising first and second transistors each having a gate insulation film formed on a semiconductor substrate and a gate electrode formed on said gate insulation film and composed of (i) a lower electrode formed by a first conductive film containing silicon, (ii) a barrier metal layer and (iii) an upper electrode formed by a second conductive film deposited on said barrier metal layer and made of metal, wherein said lower electrodes of said first and second transistors have substantially the same thickness, and said upper electrodes of said first and second transistors are formed of the same material, with said upper electrode of said second transistor having a thickness greater than a thickness of said upper electrode of said first transistor, and wherein a thickness of said gate electrode of said second transistor is greater than a thickness of said gate electrode of said first transistor.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.