Gallium nitride semiconductor structure including laterally offset patterned layers

A gallium nitride semiconductor structure comprising:

• a non-gallium nitride layer,
• an underlying gallium nitride layer on the non-gallium nitride layer;
• a first patterned layer that includes a first array of openings therein, on the underlying gallium nitride layer;
• a first vertical gallium nitride layer that extends from the underlying gallium nitride layer and through the first array of openings;
• a first lateral gallium nitride layer that extends from the first vertical gallium nitride layer onto the first patterned layer opposite the underlying gallium nitride layer and that coalesces on the first patterned layer opposite the underlying gallium nitride layer;
• a second patterned layer that includes a second array of openings therein, on the first lateral gallium nitride layer, the second array of openings being laterally offset from the first array of openings;
• a second vertical gallium nitride layer that extends from the first lateral gallium nitride layer and through the second array of openings;
• and
• a second lateral gallium nitride layer that extends from the second vertical gallium nitride layer onto the second patterned layer opposite the first lateral gallium nitride layer and that coalesces on the second patterned layer opposite the first lateral gallium nitride layer;
• wherein the underlying gallium nitride layer and the first vertical gallium nitride layer include a predetermined dislocation defect density;
• and
• wherein the second vertical gallium nitride layer and the second lateral gallium nitride semiconductor layer are of lower dislocation defect density than the predetermined dislocation defect density.