Semiconductor film, liquid-crystal display using semiconductor film, and method of manufacture thereof

A crystalline semiconductor thin film fabricated by a laser crystallizing method, which is formed on a glass substrate, and has a film thickness within a range of 40 nm to 100 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π){fraction (12)}.

A crystalline semiconductor thin film fabricated by a laser crystallizing method, which is formed on a glass substrate, and has a film thickness within a range of 40 nm to 100 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½, and further when crystal structures on an arbitrary cross section of the crystalline semiconductor thin film are observed, at least more than 70% of the crystal grains continuously extend from an interface between the semiconductor layer and a base layer to the semiconductor surface without discontinuity at some midpoint.

A crystalline semiconductor thin film fabricated by a laser crystallizing method, which is formed on a glass substrate, and has a film thickness thicker than 40 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm.

A crystalline semiconductor thin film fabricated by a laser crystallizing method, which is formed on a glass substrate, and has a film thickness thicker than 40 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½.

A semiconductor apparatus containing a thin film transistor, wherein the thin film transistor is formed on a glass substrate, and a semiconductor thin film formed in an active layer of the thin film transistor through a laser crystallizing method has a thickness within a range of 40 nm to 100 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm.

A semiconductor apparatus containing a thin film transistor, wherein the thin film transistor is formed on a glass substrate, and a semiconductor thin film formed in an active layer of the thin film transistor through a laser crystallizing method has a thickness within a range of 40 nm to 100 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½.

A semiconductor apparatus containing a thin film transistor comprising a semiconductor thin film, wherein the thin film transistor is formed on a glass substrate, and a semiconductor thin film formed in an active layer of the thin film transistor through a laser crystallizing method has a thickness within a range of 40 nm to 100 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½, and further when crystal structures on an arbitrary cross section of the crystalline semiconductor thin film are observed, at least more than 70% of the crystal grains continuously extend from an interface between the semiconductor layer and a base layer to the semiconductor surface without discontinuity at some midpoint.

A semiconductor apparatus containing a solar cell, wherein a semiconductor thin film formed at least in a first layer in semiconductor layers of the solar cell through a laser crystallizing method has a thickness thicker than 40 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm.

A semiconductor apparatus containing a solar cell, wherein a semiconductor thin film formed at least in a first layer in semiconductor layers of the solar cell through a laser crystallizing method has a thickness thicker than 40 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½.

semiconductor apparatus containing a solar cell, wherein a semiconductor thin film formed at least in a first layer in semiconductor layers of the solar cell through a laser crystallizing method has a thickness thicker than 40 nm;

• an average roughness of the surface smaller than 5 nm;
• and an average size of the crystal grains larger than 500 nm, wherein when a surface area of an arbitrary crystal grain is expressed by Sn and a circumferential length on the surface of the arbitrary crystal grain is expressed by Ln, at least more than 50% of the crystal grains satisfy the relation Ln≦4πRn where Rn=(Sn/π)½, and further when crystal structures on an arbitrary cross section of the crystalline semiconductor thin film are observed, at least more than 70% of the crystal grains continuously extend from an interface between the semiconductor layer and a base layer to the semiconductor surface without discontinuity at some midpoint.