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US 6,608,325 B1Granted
Transistor and semiconductor device having columnar crystals
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga, Hisashi Ohtani
Life of this patent
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Abstract
A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
Claims116
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween,
- wherein crystals of said semiconductor film extend horizontally in <110> direction, an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
1 more element
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween,
- wherein said crystalline semiconductor film comprises a plurality of crystals extending in a direction perpendicular to [111] direction, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
2 more elements
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween,
- wherein said crystalline semiconductor film comprises crystals extending horizontally with respect to said insulating surface, an axis of said crystals extending has hexagonal symmetry with respect to [111] direction, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
2 more elements
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween,
- wherein said crystalline semiconductor film comprises crystals extending horizontally with respect to said insulating surface, an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
1 more element
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions,
- wherein crystals of said semiconductor film extend in <110> direction and an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises a plurality of crystals extending in a direction perpendicular to (111) direction, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises crystals, an axis of said crystals having hexagonal symmetry with respect to (111) direction, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises crystals, an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises crystals extending horizontally with respect to said insulating surface, an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises crystals, an axis of said crystals having hexagonal symmetry with respect to [111] direction, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween,
- wherein said crystalline semiconductor film comprises a plurality of crystals extending in <110> direction horizontally, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
2 more elements
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions,
- wherein said crystalline semiconductor film comprises crystals extending in <110> direction horizontally with respect to said insulating surface, an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said crystalline semiconductor film having at least source, drain and channel regions;
- and
- a gate electrode over said channel region with a gate insulating film interposed therebetween,
- wherein said crystalline semiconductor film comprises a plurality of crystals extending in <110> direction horizontally, and
- wherein an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle.
2 more elements
A semiconductor device comprising:
- a crystalline semiconductor film formed over a substrate having an insulating surface, said semiconductor film having at least source, drain and channel regions,
- wherein crystals of said semiconductor film extend in <110> direction and an axis of one of said crystals intersects with an axis of another one of said crystals at a constant angle, and
- wherein said crystalline semiconductor film has a thickness of 1500 Å or less.
Dependencies are inferred from the claim text.