Copolymer resin, preparation thereof, and photoresist using the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin Ho Jung, Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik
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AssigneeHyundai Electronics Industries Co., Ltd.
InventorsMin Ho Jung, Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik
Estimating the term…
The present invention relates to a copolymer resin for a photoresist used in far ultraviolet ray such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of mono-methyl cis-5-norbonen-endo-2,3-dicarboxylate unit to a structure of norbornene-maleic anhydride copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and settles the problem of offensive odor occurred in the course of copolymer resin synthesis. Further, as the resin composition can be easily controlled due to the molecular structure, the resin can be manufactured in a large scale.
A process for preparing a copolymer resin of the formula:
A photoresist composition comprising a copolymer resin of the formula:
Dependencies are inferred from the claim text.