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US 6,607,988 B2Granted
Manufacturing method of semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsTakashi Yunogami, Yoshitaka Nakamura, Kazuo Nojiri, Sukeyoshi Tsunekawa, Toshiyuki Arai, Miwako Nakahara, Shigeru Ohno, Tomonori Saeki, Masaru Izawa
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Abstract
With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.
Claims10
A manufacturing method of a semiconductor integrated circuit device, comprising the steps of:
- (a) forming a first conductor film made of a metal or an alloy containing ruthenium or osmium as a principal component over a first main surface of a wafer, and
- (b) forming a first resist pattern on said first main surface of said wafer having said first conductor film formed thereover, and
- (c) subjecting said first conductor film to isotropic dry etching with said first resist pattern as an etching mask, wherein selectivity of said first conductor film relative to a resist forming the first resist pattern is 0.5 or greater.
Dependencies are inferred from the claim text.