Method for forming a Cu interconnect pattern
AssigneesNEC Corporation, Osaka Municipal Government
InventorsHisaya Takahashi, Hirofumi Nakamura, Masanobu Izaki, Junichi Katayama
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Abstract
A method for forming a Cu interconnect pattern on a ZnO film of a printed circuit board without using a metallic catalyst on the ZnO film includes the steps of replacing Zn in the ZnO film by Cu in an aqueous solution of copper sulfate to form a CuO film, reducing the CuO in the CuO film to Cu in an aqueous solution of hydrogenated boron potassium to form a metallic Cu film, and plating the metallic Cu film with a plating Cu film in a plating liquid. The absence of the metallic catalyst improves the insulation resistance of the Cu interconnect pattern in the printed circuit board.
Claims11
A method comprising the steps of forming a zinc oxide film overlying a substrate, the zinc oxide film being implanted with a monovalent metal selected from a group consisting of Li, Na, or K;
- forming a permanent plating resist film on the zinc oxide film;
- patterning the permanent plating resist film to form a trench therein for exposing the zinc oxide film;
- dipping the exposed zinc oxide film in an aqueous solution of copper sulfate to deposit a copper oxide film in the trench by replacing zinc in the exposed zinc oxide film by copper in the copper sulfate;
- dipping the copper oxide film in a reducing solution wherein the reducing solution includes at least one of hydrogenated boron potassium, dimethylamineborane, and hydrogenated boron sodium to reduce copper oxide in the copper oxide film to metallic copper to form a metallic copper film in the trench;
- and
- dipping the metallic copper film in a plating liquid to form a plating copper film on the metallic copper film in the trench.
A method comprising the steps of forming a zinc oxide film overlying a substrate, the zinc oxide film being selected from a group consisting of non-oriented zinc oxide film, uniformly oriented zinc oxide film having a grain diameter of 0.1 micrometer or less, and zinc oxide film implanted with a monovalent metal selected from a group consisting of Li, Na, or K;
- dipping the zinc oxide film in an aqueous solution of copper sulfate to deposit a copper oxide film by replacing zinc in the zinc oxide film by copper in the copper sulfate;
- dipping the copper oxide film in a reducing solution including at least one of hydrogenated boron potassium, dimethylamineborane, and hydrogenated boron sodium to reduce copper oxide in the copper oxide film to metallic copper to form a metallic copper film;
- dipping the metallic copper film in a plating liquid to form a plating copper film on the metallic copper film;
- and
- patterning the metallic copper film and the plating copper film to form a copper interconnect pattern.
Dependencies are inferred from the claim text.