Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same
AssigneesSymetrix Corporation, Matsushita Electric Industrial Co., Ltd.
InventorsKiyoshi Uchiyama, Carlos A. Paz de Araujo, Keisuke Tanaka
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Abstract
A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid temperature pulsing anneal (“RPA”) technique with a ramp rate of 30° C./second at a hold temperature of 650° C. for a holding time of 30 minutes. The RPA technique includes applying a plurality of rapid-temperature heat pulses in sequence.
Claims41
A rapid-temperature pulsing anneal (RPA) method of fabricating a thin film of layered superlattice material comprising steps of:
- providing a substrate;
- providing a precursor containing a plurality of metals in suitable amounts for forming a layered superlattice material upon heating said precursor:
- applying said precursor to said substrate to form a coating;
- and
- applying a first rapid-temperature pulse to said coating at a first hold temperature in a range of from 400° C. to less than 800° C. for a first holding time at said first hold temperature in a range of 5 seconds to 10 minutes;
- and
- then, without an intervening application of said precursor, applying a second rapid-temperature pulse to said coating at a second hold temperature in a range of from 400° C. to less than 800° C. for a second holding time at said second hold temperature in a range of from 5 seconds to 10 minutes:
- wherein said first and second rapid-temperature pulsing are conducted in an oxygen-containing atmosphere and are not conducted in a furnace.
A rapid-temperature pulsing anneal (RPA) method of fabricating a thin film of layered superlattice material comprising steps of:
- providing a substrate;
- providing a containing a plurality of metals in suitable amounts for forming a layered superlattice material upon heating said precursor;
- applying said precursor to said substrate to form a coating;
- and
- applying a first rapid-temperature pulse to said coating at a first hold temperature in a range of from 400° C. to less than 800° C. for a first holding time at said first hold temperature in a range of from 5 seconds to 60 minutes;
- then etching said layered superlattice material;
- and thereafter
- applying a second rapid-temperature pulse to said coating at a second hold temperature in a range of from 400° C. to less than 800° C. for a second holding time at said second hold temperature in a range of from 5 seconds to 60 minutes.
Dependencies are inferred from the claim text.