Back to results
US 6,607,978 B2Granted
Method of making a semiconductor device with alloy film between barrier metal and interconnect
AssigneeNEC Electronics Corporation
InventorYoshihisa Matsubara
Life of this patent
Estimating the term…
Abstract
Between a copper film 5a and a tantalum-based barrier metal film 2b, there is set an alloy layer 10 made through the reaction of the material of the barrier metal film and copper.
Claims8
A method of making a semiconductor device, comprising the steps of:
- forming a copper-based interconnection layer on a substrate;
- forming an insulative film over said interconnection layer;
- forming a hole in said insulative layer that exposes said interconnection layer at a bottom of the hole;
- growing a titanium-containing barrier layer in the hole so that the barrier layer has a first thickness on the bottom of the hole;
- forming growth nuclei for a tungsten film on the barrier layer in the hole;
- filling the hole by depositing therein a bulk tungsten film at a deposition temperature of 350° C. to 420° C., the deposition of the bulk tungsten film at the deposition temperature causing part of the titanium in the barrier layer and part of the copper in the interconnection layer to form a 1 nm to 9 nm thick copper-titanium alloy layer that covers the bottom of the hole while retaining part of the barrier layer that does not form the alloy and that covers the alloy layer at the bottom of the hole.
3 more elements
A method of making a semiconductor device, comprising the steps of:
- forming a copper-based interconnection layer on a substrate;
- forming an insulative film over said interconnection layer;
- forming a hole in said insulative layer that exposes said interconnection layer at a bottom of the hole;
- growing a tantalum-containing barrier layer in the hole so that the barrier layer has a first thickness on the bottom of the hole;
- forming growth nuclei for a tungsten film on the barrier layer in the hole;
- filling the hole by depositing therein a bulk tungsten film at a deposition temperature of 400° C. to 480° C., the deposition of the bulk tungsten film at the deposition temperature causing part of the tantalum in the barrier layer and part of the copper in the interconnection layer to form a 1 nm to 9 nm thick copper-tantalum alloy layer that covers the bottom of the hole while retaining part of the barrier layer that does not form the alloy and that covers the alloy layer at the bottom of the hole.
3 more elements
Dependencies are inferred from the claim text.