Method of depositing a diffusion barrier for copper interconnect applications
AssigneeNovellus Systems, Inc.
InventorsRobert Rozbicki, Michal Danek, Erich Klawuhn
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AssigneeNovellus Systems, Inc.
InventorsRobert Rozbicki, Michal Danek, Erich Klawuhn
Estimating the term…
The present invention pertains to methods for forming a metal diffusion barrier on an integrated circuit wherein the formation includes at least two operations. The first operation deposits barrier material via PVD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The result of the operations is a metal diffusion barrier formed in part by net etching in certain areas, in particular the bottom of vias, and a net deposition in other areas, in particular the side walls of vias. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.
A method for depositing a diffusion barrier and a metal conductive layer for metal interconnects on a wafer substrate, the method comprising:
A method for depositing a diffusion barrier and a metal conductive layer for metal interconnects on a wafer substrate, the method comprising:
Dependencies are inferred from the claim text.