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US 6,607,973 B1Granted
Preparation of high-k nitride silicate layers by cyclic molecular layer deposition
AssigneeAdvanced Micro Devices, Inc.
InventorJoong Jeon
Life of this patent
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Abstract
One aspect of the invention relates to forming a high-k dielectric layer comprising a Group IVB metal compound, especially HfO2, HfSixOy or HfSixOyNz. According to the invention, these compounds are formed by molecular layer deposition. According to another aspect of the invention, molecular layer deposition is used to add silicon oxynitride to the dielectric. The silicon oxynitride provides a barrier to diffusion of dopants from the gate to the channel region.
Claims14
A process for forming a transistor, comprising:
- providing a semiconductor substrate;
- forming a high-k dielectric layer over the substrate by actions comprising:
- forming an atomic layer of a Group IVB metal by exposing the substrate to a gas comprising a Group IVB metal compound that undergoes a self-limiting reaction with the substrate;
- forming a first atomic layer of oxygen over the atomic layer of the Group IVB metal by exposing the substrate to a gas comprising an oxygen compound that undergoes a self-limiting reaction with the substrate;
- forming a first atomic layer of silicon over an atomic layer of oxygen by exposing the substrate to a gas comprising a silicon compound that undergoes a self-limiting reaction with the substrate;
- forming an atomic layer of nitrogen over the first atomic layer of silicon by exposing the substrate to a gas comprising a nitrogen compound that undergoes a self-limiting reaction with the substrate;
- forming a second atomic layer of oxygen over the atomic layer of nitrogen by exposing the substrate to a gas comprising the same or another oxygen compound that undergoes a self-limiting reaction with the substrate;
- and
- forming a gate over the high-k dielectric.
6 more elements
A process for forming a transistor, comprising:
- providing a semiconductor substrate;
- forming a high-k dielectric over the substrate by actions comprising;
- forming an atomic layer of silicon over the substrate by exposing the substrate to a gas comprising a silicon compound that undergoes a self-limiting reaction with the substrate;
- forming an atomic layer of oxygen over the atomic layer of silicon by exposing the substrate to a gas comprising an oxygen compound that undergoes a selflimiting reaction with the substrate;
- forming an atomic layer of a Group IVB metal by exposing the substrate to a gas comprising a Group IVB metal compound that undergoes a self-limiting reaction with the substrate;
- forming a further atomic layer of oxygen over the atomic layer of the Group IVB metal by exposing the substrate to a gas comprising an oxygen compound that undergoes a self-limiting reaction with the substrate;
- forming a second atomic layer of silicon over the further atomic layer of oxygen by exposing the substrate to a gas comprising a silicon compound that undergoes a self-limiting reaction with the substrate;
- forming an atomic layer of nitrogen over the second atomic layer of silicon by exposing the substrate to a gas comprising a nitrogen compound that undergoes a self-limiting reaction with the substrate;
- forming a still further atomic layer of oxygen over the atomic layer of nitrogen by exposing the substrate to a gas comprising the same or another oxygen compound that undergoes a self-limiting reaction with the substrate;
- and
- forming a gate over the high-k dielectric.
8 more elements
Dependencies are inferred from the claim text.