Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Gerald Deboy
Life of this patent
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Abstract
An edge termination is produced that is capable of handling high voltages. The edge termination is produced in a base material wafer that is produced in accordance with the principle of lateral charge compensation. The edge termination is formed in the base material wafer by implanting a rapidly diffusing dopant. Preferred dopants are selenium and sulfur. The high-voltage withstand strength is effected by a resulting doping profile which increases towards the edge termination.
Claims6
A method of producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation, which comprises the following steps:
- prefabricating a basic material wafer by producing a fixed grid of regions of a first conductivity type and regions of a second conductivity type, opposite to the first condnctivity type, such that charge compensation is substantially present in a lateral direction in the basic material wafer;
- and
- introducing a rapidly diffusing dopant into the regions of the basic material wafer thereby defining edge regions of a compensation component to be produced from the basic material wafer, so that, in the edge regions of the compensation component to be produced, a doping of the rapidly diffusing dopant predominates over a doping of the regions of a conductivity type opposite to that of the edge regions.
Dependencies are inferred from the claim text.