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US 6,607,970 B1Granted
Semiconductor device and method of manufacturing the same
AssigneeCasio Computer Co., Ltd.
InventorTakeshi Wakabayashi
Life of this patent
Estimating the term…
Abstract
A dicing tape is adhered to the lower surface of a silicon wafer that has pillar-shaped electrodes. The silicon wafer is cut along dicing streets, thereby making trenches among the chip-forming regions of the wafer. Next, a seal film is formed. The seal film is cut, substantially along the centerlines of the trenches. A support tape is adhered to the upper surface of the seal film. The dicing tape is peeled off. Then, those parts of the seal film that project from the lower surface of the silicon wafer are polished and removed. The support tape is peeled off. IC chips are thereby obtained. In each IC chip, the seal film covers and protects the upper surface and sides of the semiconductor substrate.
Claims18
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having an upper surface including chip-forming regions, a lower surface opposing the upper surface, sides extending between the upper and lower surfaces, and a plurality of outer connection terminals formed on the upper surface;
- making trenches in parts of the semiconductor wafer which lie between the chip-forming regions, each trench successively extending to half a thickness of the semiconductor wafer from the upper surface of the semiconductor wafer;
- forming a first seal film on the upper surface of the semiconductor wafer in a manner such that the trenches are filled and such that a top surface of each of the outer connection terminals is exposed;
- forming a second seal film on the lower surface of the semiconductor wafer;
- and
- cutting the first seal film along the trenches by removing parts of the first seal film having a smaller width than the trenches such that the semiconductor wafer is separated into individual semiconductor devices, each of which has the first seal film provided on an upper surface thereof and on an upper part of a periphery thereof while leaving a lower part of the periphery thereof exposed, and each of which has the second seal film provided on the lower surface thereof.
3 more elements
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having an upper surface including chip-forming regions, a lower surface opposing the upper surface, sides extending between the upper and lower surfaces, and a plurality of outer connection terminals formed on the upper surface;
- forming a rear seal film on the lower surface of the semiconductor wafer;
- adhering a dicing tape to a lower surface of the second seal film;
- making trenches in parts of the semiconductor wafer which lie between the chip-forming regions, each trench successively extending from the upper surface of the semiconductor wafer to half a thickness of the dicing tape so as to form concavities in an upper portion of the dicing tape;
- forming a front seal film on the upper surface of the semiconductor wafer in a manner such that the trenches are filled and such that a top surface of each of the outer connection terminals is exposed;
- and
- cutting the front seal film along the trenches by removing parts of the front seal film having a smaller width than the trenches such that the semiconductor wafer is separated into individual semiconductor devices, each of which has the front seal film provided on an upper surface thereof and on an entire surface of a periphery thereof, and each of which has the rear seal film provided on the lower surface thereof.
4 more elements
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having an upper surface including chip forming regions, a lower surface opposing the upper surface, sides extending between the upper and lower surfaces, and a plurality of connection pads formed on the upper surface;
- forming on the upper surface of the semiconductor wafer an insulating film having openings such that the upper surface of the semiconductor wafer is covered and the connection pads are exposed via the openings;
- forming on the insulating film wirings connected to the connection pads;
- forming pillar-shaped electrodes on the wirings;
- adhering a dicing tape to the lower surface of the semiconductor wafer;
- making trenches in parts of the semiconductors wafer which lie between the chip-forming regions, each trench successively extending from the upper surface of the semiconductor wafer to half a thickness of the dicing tape so as to form concavities in an upper portion of the dicing tape;
- forming a seal film on the upper surface of the semiconductor wafer in a manner such that the trenches are filled and such that a top surface of each of the pillar-shaped electrodes is exposed;
- and
- cutting the seal film along the trenches by removing parts of the seal film having a smaller width than the trenches such that the semiconductor wafer is separated into individual semiconductor devices, each of which has the seal film provided on an upper surface thereof and on a periphery thereof, wherein a portion of the seal film provided on the periphery projects from a lower surface of the semiconductor devices.
6 more elements
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having an upper surface including chip forming regions, a lower surface opposing the upper surface, a thickness between the upper and lower surfaces, and a plurality of pillar-shaped electrodes formed on the upper surface;
- adhering a dicing tape to the lower surface of the semiconductor wafer;
- making trenches by cutting parts of the semiconductor wafer which lie between the chip-forming regions, each trench successively extending to half a thickness of the dicing tape through the thickness of the semiconductor wafer from the upper surface of the semiconductor wafer;
- forming a seal film on the upper surface of the semiconductor wafer so as to fill in the trenches and cover the pillar-shaped electrodes;
- polishing an upper surface of the seal film until a top surface of each of the pillar-shaped electrodes is exposed;
- cutting the seal film along the trenches by removing parts of the seal film having a smaller width than the trenches;
- adhering a support tape to the upper surface of the seal film after cutting the seal film along the trenches;
- peeling off the dicing tape from the lower surface of the semiconductor wafer after adhering the support tape to the upper surface of the seal film, and
- polishing the lower surface of the semiconductor wafer after peeling off the dicing tape.
6 more elements
A method of manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having an upper surface including chip forming regions, a lower surface opposing the upper surface, a thickness between the upper and lower surfaces, and a plurality of pillar-shaped electrodes formed on the upper surface;
- forming a rear seal film on the lower surface of the semiconductor wafer;
- making trenches by cutting in parts of the semiconductor wafer which lie between the chip-forming regions, each trench successively extending to half a thickness of the rear seal film through the a thickness of the semiconductor wafer from the upper surface of the semiconductor wafer;
- forming a front seal film on the upper surface of the semiconductor wafer so as to cover the upper surface of the semiconductor wafer while leaving a top surface of each of the pillar-shaped electrodes exposed, and so as to fill in the trenches and thereby entirely enclose each of the chip-forming regions within the front seal film and the rear seal film;
- and
- cutting the front seal film along the trenches by removing parts of the front seal film having a smaller width than the trenches such that the semiconductor wafer is separated into individual devices, each of which has the front seal film provided on the upper surface thereof and on a periphery thereof, and each of which has the rear seal film provided on the lower surface thereof.
3 more elements
Dependencies are inferred from the claim text.