US 6,607,965 B2 · Methods of forming capacitors

Abstract

The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N2O. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer.

Claims20

Dependent claims

A method of forming a capacitor, comprising:

forming a layer of rugged silicon over a substrate;
forming a nitrogen-comprising layer over only some of a surface of the rugged silicon to form a first portion of a dielectric material;
the rugged silicon comprising portions which are exposed through the nitrogen-comprising layer;
after forming the nitrogen-comprising layer, utilizing dry oxidation with one or both of NO and N2O to form a second portion of the dielectric material;
the dry oxidation forming one or both of silicon dioxide and silicon nitride from the silicon of the exposed portions of the rugged silicon;
acid
forming a conductive material layer over the nitrogen-comprising layer;
the conductive layer, rugged silicon, and dielectric material together defining a capacitor construction.

5 more elements

Dependencies are inferred from the claim text.

Methods of forming capacitors

Life of this patent

Methods of forming capacitors

Life of this patent

Abstract

Claims20