Method for forming capacitor of semiconductor device

A method of forming a capacitor of a semiconductor device, comprising:

• providing a semiconductor substrate;
• forming a nitride film on the semiconductor substrate, said forming comprising a plasma treatment;
• forming an Ru film on the nitride film;
• forming an amorphous TaON film on the Ru film;
• crystallizing the amorphous TaON film, said crystallizing comprising a thermal treatment;
• and
• forming an upper electrode on the crystallized TaON film;
• wherein forming the Ru film comprises forming tris 2,4-octanedionato Ru in a vapor state;
• and maintaining the semiconductor substrate at a temperature ranging from 200 to 350° C., an O2 reaction gas flow rate ranging from 20 to less than 1,000 sccm, and a reactor pressure ranging from 2 mTorr to less than 1,000 Torr.

A method of forming a capacitor of a semiconductor device, comprising:

• providing a semiconductor substrate;
• forming a nitride film on the semiconductor substrate, said forming comprising a plasma treatment;
• forming an Ru film on the nitride film;
• forming an amorphous TaON film on the Ru film;
• crystallizing the amorphous TaON film, said crystallizing comprising a thermal treatment;
• and
• forming an upper electrode on the crystallized TaON film;
• wherein said crystallizing comprises a rapid thermal process (RTP) performed at a temperature ranging from 500 to 650° C. using at least one of N2 and O2 gases.

A method of forming a capacitor of a semiconductor device, comprising:

• providing a semiconductor substrate comprising as sequential layers filled in a contact hole of an interlayer insulating film a plug shaped polysilicon film;
• forming a sacrificial insulating film on the semiconductor substrate;
• patterning the sacrificial insulating film to define a capacitor region and to expose the interlayer insulation film;
• forming a nitride film over the whole substrate, said forming comprising a plasma treatment;
• forming an Ru film for a lower electrode on the nitride film;
• forming a lower electrode, said forming comprising performing a chemical mechanical polishing process on the Ru and the nitride films, and removing the sacrificial insulating film;
• forming an amorphous TaON film on the lower electrode;
• crystallizing the amorphous TaON film, said crystallizing comprising a rapid thermal process (RTP);
• and
• forming an upper electrode on the crystallized TAON film, said upper electrode comprising at least one of Ru and TiN films.

A method of forming a capacitor of a semiconductor device, comprising:

• providing a semiconductor substrate, comprising as sequential layers filled in a contact hole of an interlayer insulating film, a plug shaped polysilicon film and a metal barrier film, said metal barrier film comprising Ti and TiN films;
• forming a cap oxide film on the semiconductor substrate;
• patterning the cap oxide film to define a capacitor region and to expose the interlayer insulating film and the metal barrier film;
• forming a nitride film over the whole substrate, said forming comprising a plasma treatment;
• forming an Ru film for a lower electrode on the nitride film;
• forming a lower electrode of cylindrical shape, said forming comprising performing a chemical mechanical polishing process on the Ru and the nitride film, and removing the cap oxide film;
• forming an amorphous TaON film;
• crystallizing the amorphous TaON film, said crystallizing comprising a rapid thermal process;
• and
• forming an upper electrode on the crystallized TaON film, said upper electrode comprising at least one of Ru and TiN films.