Bipolar transistor manufacturing method
AssigneeSTMicroelectronics S.r.l.
InventorsYvon Gris, Thierry Schwartzmann
Life of this patent
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Abstract
A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a second heavily-doped P-type area separate from the second area; forming at the periphery of this second area a third N-type area; forming by epitaxy a second silicon layer; forming a deep trench crossing the first and second silicon layers, penetrating into the substrate and laterally separating the second area from the third area; and performing an anneal such that the dopant of the third area is in continuity with that of the first area.
Claims22
A method of manufacturing a bipolar transistor in a substrate of a first conductivity type, including the steps of:
- forming in the substrate a first area of a second conductivity type;
- forming by epitaxy a first silicon layer;
- forming in this first silicon layer, and substantially above the first area, a second heavily-doped doped area of the first conductivity type;
- forming at the periphery of this second area a third area of the second conductivity type separate from the second area;
- forming by epitaxy a second silicon layer;
- forming a deep trench crossing the first silicon layer and the second silicon layer, penetrating into the substrate and laterally separating the second area from the third area;
- and
- performing an anneal such that the dopant of the third area is continuous with that of the first area.
A method of forming a semiconductor device on a substrate of a first conductivity type, comprising:
- forming a first region of a second conductivity type in the substrate;
- forming a first epitaxial layer on the substrate;
- forming a second region of the second conductivity type in the first epitaxial layer;
- forming a second epitaxial layer on the first epitaxial layer;
- forming a well of the first conductivity type in the second epitaxial layer;
- and
- forming a third region of the second conductivity type in the well.
A method of forming a first semiconductor device and a second semiconductor device on a substrate of a first conductivity type, comprising:
- forming a first region of the second conductivity type in the substrate;
- forming a first epitaxial layer on the substrate;
- forming a second region of the second conductivity type in the first epitaxial layer;
- forming a third region of the first conductivity type in the first epitaxial layer;
- forming a second epitaxial layer on the first epitaxial layer;
- forming a fourth region of the first conductivity type in the second epitaxial layer;
- forming a fifth region of the second conductivity type in the second epitaxial layer;
- forming a first well of the first conductivity type in the second epitaxial layer;
- forming a second well of the second conductivity type in the second epitaxial layer;
- forming a sixth region of the first conductivity type in the second well;
- and
- forming a seventh region of the second conductivity type in the first well,
- wherein the first region, third region, fourth region, second well and sixth region comprise the first semiconductor device and the second region, fifth region, first well and seventh region comprise the second semiconductor device.
Dependencies are inferred from the claim text.