Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
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Abstract
Disclosed is a semiconductor device, comprising a semiconductor substrate, an insulating film and a gate electrode formed on the semiconductor substrate, source-drain regions formed in the semiconductor substrate, and a metal oxide layer formed selectively on the gate electrode. The gate electrode is formed of a first metal, and the metal oxide layer contains a second metal having a reduction amount of a Gibbs standard free energy in forming an oxide that is larger than that of the first metal.
Claims15
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode containing a first metal on a semiconductor substrate with an insulating film interposed therebetween;
- forming source-drain regions in said semiconductor substrate;
- selectively forming a metal oxide layer containing a second metal on said gate electrode;
- and
- forming an interlayer insulating film including a silicon oxide film over said gate electrode;
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
A method of manufacturing a semiconductor device, comprising the steps of:
- forming a dummy gate over an element region of a semiconductor substrate;
- forming source-drain regions in said semiconductor substrate;
- forming an interlayer insulating film including a silicon oxide film over said dummy gate;
- removing said dummy gate;
- forming a gate electrode containing a first metal over said semiconductor substrate;
- and
- selectively forming a metal oxide layer containing a second metal on said gate electrode;
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide larger than that of said first metal, and
- wherein said second metal has a reduction amount in a Gibbs standard free energy in forming an oxide that is larger than that of the material forming said interlayer insulating film.
Dependencies are inferred from the claim text.