Method of manufacturing a single electron resistor memory device
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A method of manufacturing a memory device that includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconductor material and a plurality of islands of semiconductor material. The islands are surrounded by an insulator. The islands and the surrounding insulator are formed in pores extending into the semiconductor material between the first and second electrodes. As a result, the memory cells are able to provide consistent, externally observable changes in response to the presence or absence of a single electron on the island.
Claims3
A method of forming a memory device comprising:
- forming a first array of memory cells having a first latency on a substrate;
- and
- forming a second array of memory cells having a second latency different than the first latency on the substrate.
Dependencies are inferred from the claim text.