Structural integrity enhancement of dielectric films

A method for fabricating a dielectric film in a semiconductor fabrication process, said method comprising the steps of:

• forming a nitride dielectric layer that is 50 Å or less in thickness over a structure comprising a film that will reflow when exposed to heat at a reflow temperature;
• exposing said nitride dielectric layer to heat using a first stage rapid thermal oxidation step at a first temperature of approximately 950° C. for approximately 20 seconds, said first temperature being equal to or greater than said reflow temperature;
• exposing said nitride dielectric layer to wet oxidation during a second stage rapid thermal oxidation step, said second stage rapid thermal oxidation step performed at a temperature of approximately 950° C. and a time duration of less than 40 seconds;
• forming a top electrode of said storage capacitor over said storage capacitor dielectric layer.

A method for forming a storage capacitor for a memory device, said method comprising the steps of:

• forming a bottom electrode of said storage capacitor over a BoroPhosphoSilicate Glass (BPSG) layer;
• forming a storage capacitor dielectric layer over said bottom electrode, said storage capacitor dielectric layer consisting of a nitride layer that is 50 Å or less in thickness;
• exposing said nitride dielectric layer to heat using a first stage rapid thermal oxidation step at a first temperature of approximately 950° C. or greater for approximately 20 seconds and that is equal to or greater than a reflow temperature required to reflow said BPSG layer;
• exposing said nitride dielectric layer to wet oxidation during a rapid thermal oxidation step, said rapid thermal oxidation step performed at a second temperature of approximately 850° and a time duration of less than 40 seconds;
• forming a top electrode of said storage capacitor over said storage capacitor dielectric layer.

A method for forming a storage capacitor dielectric for a memory device, said method comprising the steps of:

• forming BoroPhosphoSilicate Glass (BPSG) layer over a semiconductor assembly at an initial process temperature;
• forming a bottom electrode of said storage capacitor over a BoroPhosphoSilicate Glass (BPSG) layer;
• forming a storage capacitor dielectric layer over said bottom electrode, said storage capacitor dielectric layer consisting of a nitride layer that is 50 Å or less in thickness;
• exposing said nitride dielectric layer to heat using a first stage rapid thermal oxidation step at a first stage temperature of approximately 950° C. for approximately 20 seconds and that is greater than said initial process temperature and greater than any remaining temperature used in said method;
• exposing said nitride dielectric layer to wet oxidation during a rapid thermal oxidation step, said rapid thermal oxidation step performed at a second stage temperature of approximately 850° C. for less than 40 seconds;
• forming a top electrode of said storage capacitor over said storage capacitor dielectric layer.