Method for fabricating a CMOS image sensor
AssigneeUnited Microelectronics Corp.
InventorsChong-Yao Chen, Chen-Bin Lin, Feng-Ming Liu
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Abstract
A fabrication method for a CMOS image sensory device is described. An isolation layer is formed in the substrate to isolate a photodiode sensory region and a transistor device region. A gate structure is further formed on the transistor device region, followed by forming concurrently a source/drain region in the transistor device region beside the side of the gate structure and a doped region in the photodiode sensory region. Thereafter, a self-aligned block is formed on the photodiode sensory region, followed by forming a protective layer on the substrate.
Claims10
A fabrication method sensor, comprising:
- providing a substrate;
- forming a plurality of isolation layers in the substrate, wherein the isolation layers isolated the substrate into a photodiode sensory region and a transistor device region;
- forming a gate oxide layer and a gate conductive layer on the substrate;
- defining the gate conductive layer and the gate oxide layer to form a gate structure on the transistor device region;
- forming a source/drain region in the transistor device region on both sides of the gate structure and concurrently forming a doped region in the photodiode sensory region;
- forming a self-aligned block on the photodiode sensory region;
- and
- performing a salicide process to form a salicide layer on the gate conductive layer and the source/drain region;
- and
- forming a protective layer on the substrate for improving quantum efficiency and reducing dark current, wherein the protective layer covers the self-aligned block and the transistor and the salicide layer thereon.
Dependencies are inferred from the claim text.