Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Shunpei Yamazaki
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Abstract
A method of manufacturing a gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate with a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized. Therefore, the reliability of the device is improved.
Claims23
A method of manufacturing a semiconductor device comprising the steps of:
- forming an underlying insulating film comprising silicon oxide over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;
- crystallizing the semiconductor layer;
- forming a gate insulating film on the crystallized semiconductor layer;
- and
- forming a gate electrode on said gate insulating film,
- wherein said underlying insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming an underlying insulating film comprising silicon oxide over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;
- crystallizing said semiconductor layer;
- forming a gate insulating film on the crystallized semiconductor layer;
- and
- forming a gate electrode on said gate insulating film,
- wherein each of said underlying insulating film and said gate insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film;
- crystallizing the semiconductor layer;
- patterning the crystallized semiconductor layer to form one channel formation region;
- forming a second insulating film on said channel region,
- wherein each of said first and second insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film;
- crystallizing said semiconductor layer;
- patterning the crystallized semiconductor layer to form a channel region;
- forming a second insulating film on said channel region,
- wherein said first insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming an underlying insulating film comprising silicon oxide over a substrate;
- forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region;
- forming a gate insulating film on said semiconductor layer;
- and
- forming a gate electrode on said gate insulating film,
- wherein said underlying insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming an underlying insulating film comprising silicon oxide over a substrate;
- forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region;
- forming a gate insulating film on said semiconductor layer;
- and
- forming a gate electrode on said gate insulating film,
- wherein each of said underlying insulating film and said gate insulating film is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region of a thin film transistor;
- forming a second insulating film on said semiconductor layer;
- wherein each of said first and second insulating films is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film over a substrate;
- forming a semiconductor layer comprising crystalline silicon on said insulating film wherein said semiconductor layer includes a channel region of a thin film transistor;
- forming a second insulating film on said semiconductor layer,
- wherein each of said first and second insulating films is doped with fluorine during the formation thereof.
A method of manufacturing a semiconductor device comprising the steps of:
- forming an underlying insulating film comprising silicon oxide over a substrate;
- forming a semiconductor layer comprising silicon on said insulating film wherein said semiconductor layer includes a channel region;
- forming a gate insulating film on said semiconductor layer;
- and
- forming a gate electrode on said gate insulating film,
- wherein said underlying insulating film is doped with fluorine during the formation thereof.
Dependencies are inferred from the claim text.