Method of fabricating a field emission device with a lateral thin-film edge emitter

Abstract

A method for fabricating a thin-film edge emitter device includes the steps of providing a first conductive layer having a top surface; providing an insulating layer having a top surface disposed above the top surface of the first conductive layer; providing a second conductive layer on the insulating layer; and providing a well in the insulating layer over the first conductive layer and an edge in the second conductive layer proximate the well. Providing the well and the edge includes processing the first conductive, insulating, and second conductive layers by at least one of lift-off processing, photolithography processing, and processing with the use of a pre-formed insulating layer having at least one opening associated with a location of the well. The first conductive layer forms an anode. Lastly, the second conductive layer forms at least one of a cladded cathode having an emissive edge and a control electrode.

Dependencies are inferred from the claim text.