Back to results
US 6,607,924 B2Granted
Solid-state memory with magnetic storage cells
AssigneeHewlett-Packard Company
InventorsJames A. Brug, Lung T. Tran, Thomas C. Anthony, Manoj K. Bhattacharyya, Janice Nickel
Life of this patent
Estimating the term…
Abstract
A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.
Claims8
A process for forming a memory having an array of magnetic storage cells, comprising the steps of:
- depositing a bottom layer of conductor material onto a substrate;
- depositing a set of layers of magnetic materials onto the bottom layer of conductor material;
- patterning a set of bottom conductors from the bottom layer of conductor material, each bottom conductor enabling access to a corresponding subset of magnetic storage cells in the array such that the layers of magnetic materials are patterned into the magnetic storage cells in the same step and have a first dimension defined by a width of the bottom conductors.
Dependencies are inferred from the claim text.