Optical information recording medium and method of manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsRie Kojima, Keiichiro Horai, Toshiaki Kashihara, Noboru Yamada
Life of this patent
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Abstract
An optical information recording medium having a recording layer for inducing a reversible phase change by irradiation with energy beam. The recording layer contains Te, Ge, Sb, and N, and the concentration of the N being contained is in a range of about 0.1% by atom to about 10% by atom. In this constitution, an excellent repeated recording and erasing performance is obtained.
Claims26
An optical information recording medium comprising, in order:
- a substrate;
- a first light interference layer;
- a recording layer;
- a second light interference layer;
- a reflective layer;
- and
- a protective layer:
- wherein:
- said recording layer comprises Te, Ge, Sb, and N;
- said recording layer is a composition of the formula {(GeTe)x(Sb2Te3)1Sby}100−zNz, where 1.6≦x≦2.2;
- 0≦y≦0.8;
- and 2≦z≦3.1;
- and
- said recording layer is capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate;
- wherein said recording layer has a portion changing said concentration of said N in a thickness direction of said recording layer.
An optical information recording medium comprising a substrate and a recording layer capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate;
- wherein:
- said recording layer comprises Te, Ge, Sb, and N,
- the concentration of said N is about 0.1% by atom to about 10% by atom, and
- said recording layer has a portion changing said concentration of said N periodically in a thickness direction of said recording layer.
A manufacturing method of an optical information recording medium,
- the method comprising the step of forming a recording layer by sputtering a mother material comprising Te, Ge, and Sb, in a gas atmosphere comprising argon gas and nitrogen gas
- wherein:
- said recording layer is capable of undergoing a phase change on irradiation with an energy beam;
- and
- said recording layer is a composition of the formula {(GeTe)x(Sb2Te3)1Sby}100−zNz, where 1.66≦x≦2.2;
- 0≦y≦0.8;
- and 2≦z≦3.1;
- and
- said step of forming said recording layer has at least one step selected from the group consisting of:
- (a) controlling a flow rate of said nitrogen gas,
- (b) controlling a partial pressure of said nitrogen gas, and
- (c) controlling a power of sputtering.
An optical information recording medium comprising, in order:
- a substrate;
- a first light interference layer;
- a recording layer;
- a second light interference layer;
- a reflective layer;
- and
- a protective layer;
- wherein:
- said recording layer is a composition of the formula {(GeTe)x(Sb2Te3)1Sby}100−zNz, where 1.6≦x≦2.2;
- 0≦y≦0.8;
- and 2≦z≦3.1;
- and
- said recording layer is capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate.
An optical information recording medium comprising, in order:
- a substrate;
- a first light interference layer;
- a recording layer;
- a second light interference layer;
- a reflective layer;
- and
- a protective layer;
- wherein:
- said recording layer is a composition of the formula {(GeTe)x(Sb2Te3)1Sby}100 −zNz, where 1.6≦x≦2.2;
- 0≦y≦0.8;
- and z is about 0.49 to about 3.1;
- said recording layer is capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate;
- and
- said N concentration of a portion of said recording layer changes periodically in a thickness direction of said recording layer.
A manufacturing method of an optical information recording medium,
- the method comprising the step of forming said recording layer by sputtering a mother material comprising Te, Ge, and Sb, in a gas atmosphere comprising argon gas and nitrogen gas;
- wherein:
- said recording layer is capable of undergoing a phase change on irradiation with an energy beam;
- said recording layer comprises Te, Ge, Sb, and N;
- said recording layer comprises about 1.6% by atom to about 3.1% by atom N;
- said recording layer has a portion changing said concentration of said N periodically in a thickness direction of the recording layer;
- and
- said step of forming said recording layer has at least one step selected from the group consisting of:
- (a) changing a concentration of said nitrogen gas periodically while sputtering;
- and
- (b) changing a sputtering power periodically while sputtering.
An optical information recording medium comprising a substrate and a recording layer capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate;
- wherein:
- said recording layer comprises Te, Ge, Sb, and N,
- the concentration of said N is about 1% by atom to about 3.1% by atom;
- said recording layer has a portion changing said concentration of said N periodically in a thickness direction of said recording layer.
An optical information recording medium comprising, in order:
- a substrate;
- a first light interference layer;
- a recording layer;
- a second light interference layer;
- a reflective layer;
- and
- a protective layer;
- wherein:
- said recording layer is a composition of the formula {(GeTe)x(Sb2Te3)1Sby}100−zNz, where 1.6≦x≦2.2;
- 0≦y≦0.8;
- and z is about 1 to about 3.1;
- said recording layer is capable of undergoing a reversible phase change on irradiation with an energy beam disposed above said substrate;
- and
- said N concentration of a portion of said recording layer changes periodically in a thickness direction of said recording layer.
Dependencies are inferred from the claim text.