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US 6,607,674 B2Granted
Method of repairing a phase shifting mask
AssigneeMacronix International Co., Ltd.
InventorChing-Yu Chang
Life of this patent
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Abstract
A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.
Claims11
A method of manufacturing a phase shifting mask (PSM), comprising:
- providing a substrate, thereupon forming sequentially a phase shifter layer and an opaque shield layer;
- defining the phase shifter layer and the opaque shield layer, respectively;
- performing an etching procedure, etching the substrate and exposing a portion of the substrate, and etching the substrate to a predetermined depth;
- and
- performing a cleaning procedure, wherein the cleaning procedure etches a portion of the phase shifter surface, and the predetermined depth is based on an etched thickness of the phase shifter layer in the cleaning procedure.
2 more elements
Dependencies are inferred from the claim text.